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We describe the use of resonant amplification of light propelling forces for selective separation of fluid-suspended dielectric microparticles. The force amplification and the selectivity of the method is achieved using the whispering gallery mode resonances of the microparticles. The selectivity is determined by the inverse of the quality factor (Q) of the resonances in liquid (with Q ∼ 10^4 -10^6). We demonstrate that the evanescent field around a tapered optical fiber fed with ∼ 20 mW power from a 1064 nm laser can selectively move polystyrene microspheres of up to 20 μm in diameter through distances of more than 50 μm, thereby establishing that the technique is sufficient for efficient separation.more » « less
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Chakravarty, Swapnajit; Midkiff, Jason; Yoo, Kyoungmin; Chung, Chi-Jui; Rostamian, Ali; Chen, Ray T.; García-Blanco, Sonia M.; Cheben, Pavel (, Proceedings of the SPIE)Chemicals are best recognized by their unique wavelength specific optical absorption signatures in the molecular fingerprint region from λ=3-15μm. In recent years, photonic devices on chips are increasingly being used for chemical and biological sensing. Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths. Silicon is optically transparent from 1.1 μm to 8 μm with research from several groups in the mid-IR. However, intrinsic material losses in silicon exceed 2dB/cm after λ~7μm (~0.25dB/cm at λ=6μm). In addition to the waveguiding core, an appropriate transparent cladding is also required. Available core-cladding choices such as Ge-GaAs, GaAs-AlGaAs, InGaAs-InP would need suspended membrane photonic crystal waveguide geometries. However, since the most efficient QCLs demonstrated are in the InP platform, the choice of InGaAs-InP eliminates need for wafer bonding versus other choices. The InGaAs-InP material platform can also potentially cover the entire molecular fingerprint region from λ=3-15μm. At long wavelengths, in monolithic architectures integrating lasers, detectors and passive sensor photonic components without wafer bonding, compact passive photonic integrated circuit (PIC) components are desirable to reduce expensive epi material loss in passive PIC etched areas. In this paper, we consider miniaturization of waveguide bends and polarization rotators. We experimentally demonstrate suspended membrane subwavelength waveguide bends with compact sub-50μm bend radius and compact sub-300μm long polarization rotators in the InGaAs/InP material system. Measurements are centered at λ=6.15μm for sensing ammoniamore » « less
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